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| MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features * Pb-Free Packages are Available MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C 1 2 SOT-23 (TO-236) CASE 318 Style 6 1AM = Specific Device Code 1AM 3 MARKING DIAGRAM 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 MMBT3904LT3G Package SOT-23 SOT-23 SOT-23 SOT-23 Shipping 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 February, 2004 - Rev. 5 Publication Order Number: MMBT3904LT1/D MMBT3904LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small -Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf - - - - 35 35 200 50 ns ns fT Cobo Cibo hie hre hfe hoe NF 300 - - 1.0 0.5 100 1.0 - - 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF k ohms X 10- 4 - mmhos dB HFE 40 70 100 60 30 VCE(sat) - - VBE(sat) 0.65 - 0.85 0.95 0.2 0.3 Vdc - - 300 - - Vdc - V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 - - - - - 50 50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k -0.5 V < 1 ns CS < 4 pF* -9.1 V < 1 ns 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k 1N916 CS < 4 pF* 0 * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 2 MMBT3904LT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 V 15 V 2.0 V 50 70 100 200 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 10 7 5 Figure 4. Charge Data VCC = 40 V IC/IB = 10 TIME (ns) tr @ VCC = 3.0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn -On Time 500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200 t f , FALL TIME (ns) Figure 6. Rise Time ts = ts - 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 IC/IB = 20 100 70 50 30 20 10 7 5 IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3 MMBT3904LT1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA 14 f = 1.0 kHz 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 IC = 100 mA IC = 1.0 mA IC = 0.5 mA IC = 50 mA f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Figure 10. h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 h fe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain 20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 10 7.0 5.0 3.0 2.0 Figure 12. Output Admittance 2.0 1.0 0.5 0.2 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 5.0 10 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance http://onsemi.com 4 Figure 14. Voltage Feedback Ratio MMBT3904LT1 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 -55 C +25C VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C) 1.0 0.5 qVC FOR VCE(sat) 0 -0.5 -55 C TO +25C -1.0 +25C TO +125C -1.5 -2.0 qVB FOR VBE(sat) -55 C TO +25C +25C TO +125C 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 5 MMBT3904LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AH A L 3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 BS V G C D H K J STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches Figure 19. SOT-23 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MMBT3904LT1/D |
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